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TSHA5200, TSHA5201, TSHA5202, TSHA5203
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
FEATURES
* Package type: leaded * Package form: T-13/4 * Dimensions (in mm): O 5 * Leads with stand-off * Peak wavelength: p = 875 nm * High reliability * Angle of half intensity: = 12
94 8390
* Low forward voltage * Suitable for high pulse current operation * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with
DESCRIPTION
The TSHA520. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.
APPLICATIONS
* Infrared remote control and free air data transmission systems * This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT TSHA5200 TSHA5201 TSHA5202 TSHA5203 Ie (mW/sr) 40 50 60 65 (deg) 12 12 12 12 P (nm) 875 875 875 875 tr (ns) 600 600 600 600
Note Test conditions see table "Basic Characteristics"
ORDERING INFORMATION
ORDERING CODE TSHA5200 TSHA5201 TSHA5202 TSHA5203 Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-13/4 T-13/4 T-13/4 T-13/4
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation tp/T = 0.5, tp = 100 s tp = 100 s TEST CONDITION SYMBOL VR IF IFM IFSM PV VALUE 5 100 200 2.5 180 UNIT V mA mA A mW
Document Number: 81019 Rev. 1.7, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 151
TSHA5200, TSHA5201, TSHA5202, TSHA5203
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
ABSOLUTE MAXIMUM RATINGS
PARAMETER Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB TEST CONDITION SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 85 - 40 to + 100 260 230 UNIT C C C C K/W
200 180
120 100 80 RthJA = 230 K/W 60 40 20 0
0 10 20 30 40 50 60 70 80 90 100
21143
PV - Power Dissipation (mW)
140 120 100 80 60 40 20 0 RthJA = 230 K/W
IF - Forward Current (mA)
160
0
10
20 30 40
50 60 70 80
90 100
21142
Tamb - Ambient Temperature (C)
Tamb - Ambient Temperature (C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time Virtual source diameter Note Tamb = 25 C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA SYMBOL VF TKVF IR Cj TKe p TKp tr tr tf tf d 20 - 0.7 12 875 80 0.2 600 300 600 300 3.7 MIN. TYP. 1.5 - 1.6 100 MAX. 1.8 UNIT V mV/K A pF %/K deg nm nm nm/K ns ns ns ns mm
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81019 Rev. 1.7, 05-Sep-08
TSHA5200, TSHA5201, TSHA5202, TSHA5203
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs
TYPE DEDICATED CHARACTERISTICS
PARAMETER TEST CONDITION PART TSHA5200 Forward voltage IF = 1.5 A, tp = 100 s TSHA5201 TSHA5202 TSHA5203 TSHA5200 IF = 100 mA, tp = 20 s Radiant intensity IF = 1.5 A, tp = 100 s TSHA5201 TSHA5202 TSHA5203 TSHA5200 TSHA5201 TSHA5202 TSHA5203 TSHA5200 Radiant power IF = 100 mA, tp = 20 s TSHA5201 TSHA5202 TSHA5203 Note Tamb = 25 C, unless otherwise specified SYMBOL VF VF VF VF Ie Ie Ie Ie Ie Ie Ie Ie e e e e 25 30 36 50 300 400 500 600 MIN. TYP. 3.2 3.2 3.2 3.2 40 50 60 65 500 600 700 800 22 23 24 25 MAX. 4.9 4.9 4.5 4.5 125 125 125 125 UNIT V V V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW mW
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
10 1
10 4
I FSM = 2.5 A (Single Pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2
IF - Forward Current (mA)
IF - Forward Current (A)
10 3
tp = 100 s tp/T= 0.001
10 2
10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2
94 8005
0
1
2
3
4
94 8003
V F - Forward Voltage (V)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Document Number: 81019 Rev. 1.7, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 153
TSHA5200, TSHA5201, TSHA5202, TSHA5203
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
1.2 VF rel - Relative Forward Voltage (V) 1.1 IF = 10 mA 1.0 0.9
1.6
1.2 I e rel; e rel I F = 20 mA 0.8
0.8 0.7 0 20 40 60 80 100
0.4
0 - 10 0 10
94 8020
50
100
140
94 7990
Tamb - Ambient Temperature (C)
Tamb - Ambient Temperature (C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
1000 TSHA 5203 I e - Radiant Intensity (mW/sr) TSHA 5202 100 TSHA 5201 10 TSHA 5200 1 10 0
94 8006
1.25
e - Relative Radiant Power
1.0
0.75 0.5
0.25 I F = 100 mA e ( ) rel = e ( ) / e ( p ) 0 780 880 - Wavelenght (nm) 980
10 1 10 2 10 3 I F - Forward Current (mA)
10 4
94 8000
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 9 - Relative Radiant Power vs. Wavelength
0 1000
10
20 30
Ie rel - Relative Radiant Intensity
e - Radiant Power (mW)
100
40 1.0 0.9 0.8 0.7 50 60 70 80
10
1
0.1 10 0
94 8007
10 1 10 2 10 3 I F - Forward Current (mA)
10 4
94 8008
0.6
0.4
0.2
0
Fig. 7 - Radiant Power vs. Forward Current
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81019 Rev. 1.7, 05-Sep-08
- Angular Displacement
TSHA5200, TSHA5201, TSHA5202, TSHA5203
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs
PACKAGE DIMENSIONS in millimeters
9612121
Document Number: 81019 Rev. 1.7, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 155
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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